TC2623 transistor equivalent, 12ghz super low noise hemt / algaas/gaas field effect transistor.
§ 0.3dB minimum noise figure @ 5GHz § 0.65dB minimum noise figure @ 12GHz § 14dB associated gain @ 5GHz § 10.5dB associated gain @ 12GHz 1 : Gate 2 : Source 3 : Drain 4 :.
The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with a SI3N4 layer. It is mounted in a 70mils hermetic ceramicm.
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